Revised on Nov. 5

General Program

November 18 (Wed), 2009
18:00-20:00	Registration at 1F GRAND FOYER
November 19 (Thu), 2009
8:00	Registration at 1F GRAND FOYER
	Session 1: Opening Session
9:00	Opening remarks	K. Kimura (Kyushu Institute of Technology)
9:10	Keynote speech	J. Steigerwald (Intel)
9:50	Session 2 : CMP Fundamentals
	Invited speech	S. V. Babu (Clarkson University)
11:40	Lunch at 4F Buffet Seala
12:40	Session 3 : Poster Session (1)
13:40	Session 4 : STI-CMP
	Invited speech	D.Ryuzaki (Hitachi Chemical)
14:50	Session 5 : Abrasives
16:10	Break
16:30	Session 6 : Pad & Dressing
	Invited speech	C. S. Chern (TSMC)
18:20	Break
18:50-20:30	Banquet at Room ARGOS F
November 20 (Fri), 2009
8:00	Registration at 1F GRAND FOYER
	Session 7: CMP for TSV
9:00	Keynote speech	M.Koyanagi (Tohoku University)
11:00	Session 8 : Post CMP Cleaning
11:40	Lunch at 4F Buffet Seala
12:40	Session 9 : Poster Session (2)
13:40	Session 10 : Defects & Metrology
	Invited speech	J. C. Yang (Samsung)
15:50	Break
16:10-18:30	Session 11 : CMP for Integration
	Invited speech	Y. Moon (Global Foundries)
	Invited speech	H.Chibahara (Renesas)
November 21 (Sat), 2009
8:00	Registration at 1F GRAND FOYER
	Session 12: Metal CMP
8:20	Invited speech	Y.Hayashi (NEC Electronics)
10:55-11:00	Session 13 : Closing Session
	Information on Next Conference
	Closing remarks	M. Tsujimura (Ebara)

Session Program

Note:	All oral sessions will take place in NAVIS A/B (1F)
	No photography/video taping is allowed in the meeting rooms

 

NOVEMBER 19 (THURSDAY)

8:00 – 9:00  Registration (1F GRAND FOYER)

 

Session 1: Opening

Chair: Syuhei Kurokawa (Kyushu University)

9:00
Opening Remarks
Chairs of ICPT2009: Keiichi Kimura (Kyushu Institute of Technology)

9:10
Keynote Presentation: CMP Technologies for 45nm and Beyond
Joseph M. Steigerwald (Intel)

 

Session 2: CMP Fundamentals

Chair: Hirokuni Hiyama (Ebara Corporation)

9:50
2.1 Invited: Polishing of Oxide, Nitride and Polysilicon films with Tunable Selectivity
S.V. Babu (Clarkson University)

10:20
2.2 Classification of Chemical and Mechanical Balance in CMP for Electronic Materials
Haedo Jeong, Hyunseop Lee, Woonki Shin (Pusan National University)

10:40
2.3 Particle-Scale Modeling of CMP
Jan B. Talbot (University of California, San Diego), Fiona M. Doyle, David A. Dornfeld (University of California, Berkeley)

11:00
2.4 Kinetic Competition during Si/SiO2 Non Selective CMP Process by Silicon Surface Oxidation
F. Nemouchi, P. Meininger, C. Euvrard-Colnat (CEA-Leti-MINATEC), P. Besson, S. Gaillard, S. Bernasconi, O. Hinsinger, M. Rivoire (STMicroelectronics), F. Durix (EBARA Precision Machinery Europe GmbH)

11:20
2.5 Qualification of Dynamic Pressure Distribution on Wafer by Pressure Sensing Sheet during Polishing
Xun Gu, Takenao Nemoto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku University)

11:40 – 12:40  Lunch (4F Buffet Seala)

 

12:40 – 13:40 (1F NAVIS B + GRAND FOYER)

Session 3: Poster Presentation 1

Chair: Yoji Umesaki (Kyushu University)

3.1
Development of Practical CMP Simulator and Its Application
Atsushi Ohtake (Hitachi Ltd.), Toshiyuki Arai (Renesas Technology Corp.), Syuhei Kurokawa, Toshiro Doi (Kyushu University)

3.2
Post-CMP Cleaning Behavior of Modified Surface Charge PVA Brushes
Rakesh K. Singh, Saksatha Ly, David Stockbower, Joseph Smith (Entegris, Inc.), Robert Donis (Air Liquide Electronics U.S. LP), Vishal Khosla (Center for Tribology Inc.), Christopher Wargo (Entegris, Inc.)

3.3
Development of a Revolution Atomizing Two Fluid Cleaning Nozzle (RAC Nozzle) for Post-CMP Cleaning
Yoshiyuki Seike, Tatuo Shibata, Yoshinori Kobayashi (Asahi Sunac Corporation), Keiji Miyachi (Asahi Sunac Corporation, Kyushu University), Syuhei Kurokawa, Toshiro Doi (Kyushu University)

3.4
CMP Pad Surface Characterization for the Scratch Generation Mechanism
Satoshi Kamo, Hiroyuki Miyauchi, Hirotaka Shida (JSR Corporation)

3.5
Study on Micro-scratches Generated in Oxide Film CMP with Fumed Silica Slurry
Yoshihiko Itoh, Toshiro Doi, Hiroyuki Kohno, Syuhei Kurokawa, Yoji Umezaki (Kyushu University)

3.6
Detection of Large Sized Foreign Materials in CMP Slurry and Reduction of Micro-scratches
Takao Funakoshi, Senri Ojima (Nomura Micro Science Co., Ltd.), Syuhei Kurokawa, Toshiro K. Doi, Osamu Ohnishi, Yoji Umezaki, Yoji Matsukawa (Kyushu University)

3.7
Impact of SiO2 Agglomeration on Surface Defectivity during CMP Process
Kazusei Tamai (Kyushu University, Fujimi Incorporated), Tomohiko Akatsuka, Hitoshi Morinaga (Fujimi Incorporated)

3.8
An Extensive Study on Scratch Generation during Oxide CMP
Y. Nagendra Prasad, In-Kwon Kim, In-Gon Kim, Jin-Goo Park (Hanyang University)

3.9
A Novel Approach for Scratch Detection and Study on Dependency of Scratches during Oxide CMP
In-Gon Kim, In-Kwon Kim, Y. Nagendra Prasad, Jae-Gon Choi, Jin-Goo Park (Hanyang University)

3.10
Effect of Mechanical and Chemical Wear of Diamond on Consistency of Conditioning
Masanori Kawakubo,  Takahiro Sugaya, Osamu Hirai, Ken Tsugane (Hitachi, Ltd.), Kazunori Kadomura (A. L. M. T. Diamond Corp.), Yohei Yamada (Hitachi, Ltd.)

3.11
Quantification of Pad Surface Conditions with Diamond Conditioners and Polishing Characteristics in CMP Process
Kazunori Kadomura (A. L. M. T. Diamond Corp.), Syuhei Kurokawa, Toshiro Doi, Taro Akama, Yoji Matsukawa, Yoji Umezaki (Kyushu University), Yukio Okanishi (A. L. M. T. Corp.), Osamu Ohnishi (Kyushu University)

3.12
The Pad Dressing Phenomena of Multiple Diamond Grits: Implications for the Design of CMP Pad Conditioners
James C. Sung (KINIK Company, National Taiwan University, National Taipei University of Technology), Na-Lin Chen, Yang-Liang Pai, Cheng-Shiang Chou, Chih-Chung Chou, Shao-Chung Hu (KINIK Company), Michael Sung (Advanced Diamond Solutions, Inc.)

3.13
Withdrawn

3.14
Effects of CMP Conditioner Diamond Shape on Oxide and Copper Wafer Removal Rate
Taewook Hwang, J. H. Wu, Rama Vedantham (Saint-Gobain Abrasives)

3.15
Measurement and Analysis of Pad Wear Profile due to Conditioning Process in Double Side Polishing
Sangjik Lee, Sukhoon Jeong, Hyunseop Lee, Haedo Jeong (Pusan National University)

3.16
The Outbreak Mechanism and the Reduction Technology of the Roughness at the Silicon Wafer Surface Polishing
Shuhei Takahashi, Yutaka Inoue, Tomohiro Imao, Kohsuke Tsuchiya, Kazusei Tamai, Hitoshi Morinaga (Fujimi Incorporated)

3.17
Effect of Retainer Pressure on Removal Profile and Stress Distribution in Oxide CMP
Jaehyun Bae, Hyunseop Lee, Heado Jeong (Pusan National University)

3.18
Development of Ceria Based STI Slurries with High Planarization Efficiency
Michael Lauter, Vijay Raman, Roland Lange, Yuzhuo Li (BASF SE)

3.19
Numerical Simulations on the Particle Transport in Slurry Flowing on the CMP Pad
Katsuya Nagayama, Makoto Imajo, Keiichi Kimura (Kyushu Institute of Technology)

3.20
The Influence of Silica Abrasives on the Polishing Performance in Abrasive Driven CMP Processes
Mario Brands (BASF SE), Michael Kröll (Evonik Degussa GmbH), Yuzhuo Li (BASF SE)

3.21
Effect of Morphology and Surface Property of Silica Particles on the CMP of Oxide Film
Jeong-Hwan Jeong (Korea Institute of Ceramic Engineering and Technology, Hanyang University), Hyung Mi Lim, Dae Sung Kim, Seung-Ho Lee (Korea Institute of Ceramic Engineering and Technology), Ungyu Paik (Hanyang University)

3.22
Influence of Stability of Silica Slurry on Defect Performance
Hiroshi Kimura, Yoshiharu Ota, Koichi Yoshida (Nitta Haas Incorporated)

3.23
Study on Functionality of Fine Particles in Slurry for Oxide CMP Process
Yuuichi Hashiyama, Panart Khajornrungruang, Keiichi Kimura (Kyushu Institute of Technology)

3.24
Formation and Characteristics of Fumed Silica
Applicability of Produced Particles for CMP from the Viewpoint of Flame Analysis
Yoshio Mitani, Takanori Teshima (Tokuyama Corporation)

 

Session 4: STI-CMP

Chair: Takao Kaga (Nissan Chemical)

13:40
4.1 Invited: Scratch-free Dielectric CMP Process with Nano-colloidal Ceria Slurry
Daisuke Ryuzaki, Yosuke Hoshi, Yoichi Machii, Naoyuki Koyama, Haruaki Sakurai, Toranosuke Ashizawa (Hitachi Chemical Co., Ltd.)

14:10
4.2 Mechano-Electrical Polishing Mechanism of SiO2 by Cerium Oxide Slurry
Yoshio Homma, Tsuyoshi Masuda, Jayakrishnan Nair (Nihon Cabot Microelectronics KK), James Shen (Cabot Microelectronics Co.)

4.3
Withdrawn

14:30
4.4 Role of DL-Aspartic Acid in STI CMP Slurries
Manivannan Ramachandran, Ramanathan Srinivasan (Indian Institute of Technology Madras)

 

Session 5: Abrasive

Chair: Hitoshi Morinaga (Fujimi Incorporated)

14:50
5.1 Effect of Particle-Substrate Interaction on the Polishing Rate
Kazusei Tamai (Kyushu University, Fujimi Incorporated), Akihito Yasui, Hitoshi Morinaga (Fujimi Incorporated)

15:10
5.2 Slurry Abrasive Particle Size Measurement by SMPS (Scanning Mobility Particle Sizer)
Hojoong Kim, Kang Jun Kim (Sungkyunkwan University), Ji Chul Yang (Sungkyunkwan University, Samsung Electorinics), Taesung Kim (Sungkyunkwan University)

15:30
5.3 Effects of Slurry Distribution using Diaphram and Centrifugal Pumps on the Defectivity in a Cu CMP Process
Robert Donis, Matthew Fisher (Air Liquide Electronics U.S. LP), Leland Bauck (Levitronix LLC)

15:50
5.4 New Abrasive Technology for Advanced CMP Processes
Muneaki Tahara, Yasushi Matsunami, Kazusei Tamai (Fujimi Incorporated), Fusayo Saeki (Fujimi Corporation), Hitoshi Morinaga (Fujimi Incorporated)

16:10 – 16:30  Break in the Exhibit Hall (1F NAVIS B)

 

Session 6: Pad & Dress

Chair: Panart Khajornrungruan (Kyushu Institute of Technology)

16:30
6.1 Invited: Precision CMP in Advanced Semiconductor Manufacturing
Chyi S. Chern (Taiwan Semiconductor Manufacturing Company, Ltd.)

17:00
6.2 Effect of Diamond Abrasives on Wear Characteristics of CMP Pad
Kang Jun Kim (Sungkyunkwan University, Shinhan Diamond Co.), Ji Chul Yang (Sungkyunkwan University, Samsung Electronics), Mun Seak Park, Young Ho Jung (Shinhan Diamond Co.), Taesung Kim (Sungkyunkwan University)

17:20
6.3 Effect of Pad Micro-Texture on Frictional Force, Removal Rate, and Wafer Topography during ILD/STI CMP Processes
Yun Zhuang (Araca, Inc., University of Arizona), Xiaoyan Liao, Jiang Cheng (University of Arizona), Leonard J. Borucki, Siannie Theng (Araca, Inc.), Toranosuke Ashizawa (Hitachi Chemical Co., Ltd.), Ara Phillipossian (Araca, Inc., University of Arizona)

17:40
6.4 Next Generation Polish Pad Tunability on CMP Performance
Toshi Kasai, Chul Woo Nam, William Fortino, Abaneshwar Prasad, Jaishankar Kathurirangan, Greg Gaudet, Ananth Naman, Fred Sun (Cabot Microelectronics Co.)

18:00
6.5 Study of Optimum Polishing Pad Surface for CMP
Masatoshi Akaji, Shinichi Haba, Koichi Yoshida, Akira Isobe, Masaharu Kinoshita (Nitta Haas Incorporated)

18:20 – 18:50  Break in the Exhibit Hall (1F NAVIS B)

18:50 – 20:30  Banquet (1F ARGOS F)

 

NOVEMBER 20 (FRIDAY)

8:00 – 9:00  Registration (1F GRAND FOYER)

 

Session 7: CMP for TSV

Chair: Akira Isobe (Nitta Haas Incorporated)

9:00
7.1 Keynote Presentation: Super-Hetero Integration Technology Using Self-Assembly
Mitsumasa Koyanagi (Tohoku University)

9:40
7.2 CMP Processing to Enable 3D Stacked IC Integration
Jan Vaes, Nancy Heylen, Jan Van Olmen, Cedric Huyghebaert, Leonardus H.A. Leunissen (IMEC vzw)

10:00
7.3 Tunable Removal Rate Slurry for Both Thin and Thick Cu Application: Challenges from Development Phase to Production Release
Karim Bennedine, Alain Chabourel, Maurice Rivoire (STMicroelectronics), Daniel Scevola (CEA-LETI), Peter Bridger, Christophe Gillot (JSR Micro N.V.), Tomohisa Konno (JSR Corporation)

10:20
7.4 Newly Developed High Speed Copper CMP Slurry for TSV Application Based on Friction Analysis with AFM Measurement
Jin Amanokura, Hiroshi Ono (Hitachi Chemical Co., Ltd.), Kyoko Hombo (Hitachi, Ltd.)

10:40
7.5 Ultra-high-removal-rate Cu-Slurry Technology for Three-Dimensional Through-silicon-vias
Yoshiyuki Matsumura, Haruki Nojo, Akira Isobe (Nitta Haas Incorporated)

 

Session 8: Post-CMP Cleaning

Chair: Hitoshi Morinaga (Fujimi Incorporated)

11:00
8.1 Evaluation of Cu-Inhibitor Complex Solubility in Post Cu-CMP Cleaner
Yasuhiro Kawase, Atsushi Ito, Ken Harada, Toshiyuki Suzuki (Mitsubishi Chemical Corporation), Makoto Hara, Hidemitsu Aoki, Chiharu Kimura, Takashi Sugino (Osaka University)

11:20
8.2 BTA Removal and Prevention of Surface Oxidation for Copper Post CMP Cleaning
Atsushi Otake, Akira Kuroda, Takanori Matsumoto, Jerome Daviot, Cass Shang (EKC Technology, DuPont Electronic Technologies)

11:40 – 12:40  Lunch (4F Buffet Seala)

 

12:40 – 13:40 (1F NAVIS B + GRAND FOYER)

Session 9: Poster Presentation 2

Chair: Syuhei Kurokawa (Kyushu University)

9.1
Optimizing Pad Groove Design and Polishing Kinematics for Reduced Shear Force, Low Force Fluctuation and High Removal Rate Attributes of Copper CMP
Takenao Nemoto, Xun Gu, Akinobu Teramoto, Tadahiro Ohmi (Tohoku University), Yasa Sampurno, Yun Zhuang (Araca, Inc., University of Arizona), Sian Theng (Araca, Inc.), Ara Philipposian (Araca, Inc., University of Arizona)

9.2
A Simulation of Material Removal Profile for Copper Chemical Mechanical Polishing
Hyunseop Lee, Jaehyun Bae, Sangjik Lee, Haedo Jeong (Pusan National University)

9.3
CMP Slurry for Cu/Porous Low-K Integration
Yugo Tai, Atsushi Baba, Tatsuyoshi Kawamoto, Tomohisa Konno (JSR Corporation)

9.4
Effect of SiO2 Coated Polystyrene Abrasive Slurry on Polishing Properties in Copper-CMP Process
Jeong-Hwan Jeong (Korea Institute of Ceramic Engineering and Technology, Hanyang University), Jung Whan Yoo, Hyung Mi Lim, Dae Sung Kim, Seung-Ho Lee (Korea Institute of Ceramic Engineering and Technology), Ungyu Paik (Hanyang University), Hyu-Bum Park, Seok Joo Kim (SEMICHEM Co., Ltd.)

9.5
Copper and Silicon CMP for Via Exposure in 3DIC TSV Application
Jui-Chin Chen, Shih-Hui Wang, Kuan-Ju Wang, Shang-Chun Chen, Dun-Ying Shu, Chwan-Ying Lee, Ming-Jinn Tsai, Ming-Jer Kao (Industrial Technology Research Institute)

9.6
A Study on the Impact of Polymer Additives in Bulk Copper CMP Slurry at Neutral PH
Jongil Noh, Homer Chou, Wonlae Kim, Inkyung Lee, Changki Hong (Cheil Industries Inc.), Junyong Kim, Jahyung Han, Kyunghyun Kim (Samsung Electronics)

9.7
Improvement of Electrochemical Mechanical Polishing (ECMP) Characteristics According to the NaNO3 Electrolyte Adding
Youngkyun Lee, Sukhoon Jeong (Pusan National University), Yongjin Seo  (Daebul University), Haedo Jeong (Pusan National University)

9.8
Electro-Chemical Mechanical Polishing (E-CMP) of Copper Substrates with Micro Fiber Pad
Electro-Chemical Mechanical Polishing (E-CMP) of Copper Substrates with Micro Fiber Pad Tadashi Hasegawa, Yoji Umezaki, Syuhei Kurokawa, Yoji Matsukawa (Kyushu University), Ryohei Ishimaru (Kurume National College of Technology), Toshiro K. Doi (Kyushu University)

9.9
Cu-CMP Characteristics by Controlled Atmosphere Polishing Machine and Effect of High Pressure CO2 Gas
Yota Oki, Toshiro Doi, Syuhei Kurokawa, Yoji Matsukawa, Yoji Umezaki, Kei Kitamura (Kyushu University), Isamu Koshiyama (The Koshiyama Science & Technology Foundation)

9.10
New Polishing Method with Water-based Slurry, Controlled by AC Electric Field during Processing
Yoichi Akagami, Takayuki Kusumi, Yasuhiro Sato (Akita Prefectural R&D Center)

9.11
The Black Pad with Graphite Impregnation for CMP
James C. Sung (KINIK Company, National Taiwan University, National Taipei University of Technology), Pei-Lum Tso (National Tsing Hua University), Ming-Yi Tsai (National Chin-Yi University of Technology), Ying-Tung Chen (National Defense University), Pei-Hau Chen (National Tsing Hua University), Shao-Chung Hu (KINIK Company), Michael Sung (Advanced Diamond Solutions, Inc.)

9.12
Deposited CVD Diamond CMP Pad Conditioner for Metal CMP
Jong-Jae Lee, So-Young Yoon, Joo-Han Lee (EHWA DIAMOND IND. Co., Ltd)

9.13
Corrosion Behavior of Cu-barrier Metal Coupling in CMP Slurry
Katsumi Mabuchi, Kyoko Honbo (Materials Research Laboratory, Hitachi, Ltd.), Jin Amanokura, Hiroshi Ono (Hitachi Chemical, Ltd.)

9.14
Analysis of CMP Mechanism by Scanning Colloidal Probe Microscopy
Kyoko Honbo, Katsumi Mabuchi (Materials Research Laboratory, Hitachi, Ltd.), Jin Amanokura, Hiroshi Ono (Hitachi Chemical, Ltd.)

9.15
Evaluation Method for Surface Topography of Conditioned Polishing Pad based on Fourier Transform
Takahisa Okuzono, Panart Khajornrungruang, Yoshikazu Idei, Keiichi Kimura (Kyushu Institute of Technology)

9.16
Study on Slurry Flow in CMP Process for Large Quadrilateral Quartz Glass Substrate
Nagisa Wada, Panart Khajornrungruang, Keiichi Kimura (Kyushu Institute of Technology)

9.17
Development of Arrayed Micro Pattern on Polishing Pad Surface Applied with Anisotropic Etching
Keisuke Yasuda, Keiichi Kimura, Akiyoshi Baba, Panart Khajornrungruang, Akiho Tanaka (Kyushu Institute of Technology)

9.18
Hybrid e-CMP/CMP Process for Cu Dual Damascene TSV Interconnects by Using Non-Contact Electrode e-CMP Pad
Daisuke Abe, Taro Enomoto, Shigeru Tominaga (Roki Techno Co., Ltd.), Hideki Kitada, Takayuki Ohba (The University of Tokyo)

9.19
Simulation of Electrochemical Mechanical Polishing
Akira Fukuda (Ebara Corporation, Kyushu University), Akira Kodera, Yasushi Toma, Tsukuru Suzuki, Hirokuni Hiyama (Ebara Corporation), Toshiro Doi, Syuhei Kurokawa (Kyushu University)

9.20
Polishing Behaviors of Morphology Controlled Particles
Mami Tokunaga, Yuji Tawarazako, Kazuhiro Nakayama, Tatsuya Mukai, Akira Nakashima (JGC Catalysts & Chemicals Ltd.)

9.21
Development of Evaluation Method of Pad Surface Characteristics Based on Contact Image Analysis Using Image Rotation Prism
Michio Uneda, Kenji Okabe (Kanazawa Institute of Technology), Norihiko Moriya, Takumi Kobayashi, Kazutaka Shibuya (Fujikoshi Machinery Corp.), Ken-ichi Ishikawa (Kanazawa Institute of Technology)

9.22
Analytical Study of Effects of Material Properties and Polishing Conditions on Tribological Phenomena during CMP
Yohei Hashimoto, Norikazu Suzuki, Rei Hino, Eiji Shamoto (Nagoya University)

9.23
New Post CMP Clean for Cu/Low-k Integration
Yutaka Murakami, Norio Ishikawa (Kanto Chemical Co., Inc.)

9.24
Study of Appropriate Filtration with Fine Depth Filter for CMP Slurry
Fumitake Watanabe, Masatoshi Hashimoto, Yoko Yatabori, Masato Sumiya, Toru Numaguchi (Nihon Pall Ltd.)

 

Session 10: Defects & Metrology

Chair: Haedo Jeong (Pusan National University)

13:40
10.1 Invited: Investigation of Micro Scratch Formation Based on the Stick-slip Phenomena
Ji Chul Yang (Samsung Electronics)

14:10
10.2 In situ Metrology for Glass and Copper CMP
Minchul Shin, James Vlahakis, Vincent P. Manno, Chris B. Rogers, Edward Paul (Tufts University), Mansour Moinpour, Donald Hooper (Intel Corporation), Robert D. White (Tufts University)

14:30
10.3 Development on Novel End Point Prediction Using Skin-EDDY Method in Chemical Mechanical Polishing
Takashi Fujita, Keita Kitade, Toshiyuki Yokoyama (Tokyo Seimitsu Co. Ltd.)

14:50
10.4 A Novel Inspection Normal Illumination (NI) BF and iDO Advantage for Low-K CMP Application Beyond 45 nm Node
C.Y. Cheng, S.N.Peng, S.C. Chen, Wei-Chung Yu (Dow Chemical), Melvin Ng (KLA-Tencor Corporation)

15:10
10.5 Effect of Polish By-Products on Chemical Mechanical Planarization Defects
In-Kwon Kim, Nagendra Prasad, In-Gon Kim, Hye-Young Son, Jin-Goo Park (Hanyang University)

15:30
10.6 Haze as Key CMP Output Parameter
Viorel Balan, Damian Morel, Sylvie Favier (CEA-Leti-MINATEC), Christophe Gillot (JSR Micro N.V.), Maurice Rivoire (STMicroelectronics)

15:50 – 16:10  Break in the Exhibit Hall (1F NAVIS B)

 

Session 11: CMP for Integration

Chair: Yohei Yamada (Hitachi, Ltd.)

16:10
11.1 Invited: Chemical Mechanical Polishing (CMP) for Front End of Line (FEOL) Integration in 22 nm Technology and Beyond
Yongsik Moon (GLOBALFOUNDRIES Inc.), Rajasekhar Venigalla, Christopher Sheraw (IBM Systems and Technology Group), Cindy Wang (IBM Yorktown Heights Research), Jason Cummings, Donald Canaperi (IBM Albany Nanotech), Doug Lee (GLOBALFOUNDRIES Inc.), Lindsey Hall (STMicroelectronics), Laertis Economikos (IBM Systems and Technology Group)

16:40
11.2 CMP Challenge of Acidic Barrier Slurry Chemistry on Direct Polishing Applications for Interconnect
F. Gaillard, F. Nemouchi, Catherine Euvrard (CEA-Leti-MINATEC), O. Robin, V. Caubet, M. Mellier, O. Hinsinger, M. Rivoire (STMicroelectronics), F. Durix (EBARA Precision Machinery Europe GmbH)

17:00
11.3 CMP Technique for CNT/SOD Composite Using Ceria Slurry
Takashi Hyakushima (MIRAI-Selete, Kyushu University), Toshiro Doi, Syuhei Kurokawa (Kyushu University), Motonobu Sato,  Mizuhisa Nihei, Yuji Awano (MIRAI-Selete)

17:20
11.4 Invited: Effect of Resist CMP on Trench First Dual Damascene
Hiroyuki Chibahara, Hayato Korogi, Yoshiharu Ono, Takayuki Saito, Hiroshi Sakaue, Kazunori Yoshikawa, Kazumasa Yonekura, Takahisa Furuhashi, Kazuo Tomita, Akira Ueki, Susumu Matsumoto, Moriaki Akazawa, Hiroshi Miyatake (Renesas Technology Corp.)

17:50
11.5 Precision Deposition of Organic EL films, Applying a CMP Technology Combined with Spraying Under the Atmosphere Pressure
Kazumasa Kurizuka, Toshiro Doi, Syuhei Kurokawa (Kyushu University), Koichi Sato, Yoshihiko Tsuchida (Sumitomo Chemical Corporation), Yoshinori Kobayashi, Keiji Miyachi (Asahi Sunac Corporation), Takeshi Yamada (Sumitomo Chemical Corporation)

18:10
11.6 New TFT Architecture Using CMP for Stackable 3D Monolithic Flash Memory
Robert L. Rhoades (Entrepix, Inc.), Andrew J. Walker (Schiltron Corporation)

 

 

NOVEMBER 21 (SATURDAY)

8:00 – 8:20  Registration (1F GRAND FOYER)

 

Session 12: Metal CMP

Co-Chairs: Seiichi Kondo (Semiconductor Leading Edge Technologies, Inc.) and Motoshu Miyajima (Fujitsu Microelectronics)

8:20
12.1  Invited: CMP Process Evolution for Scaled-down Semiconductor Computing Devices
Yoshihiro Hayashi (NEC Electronics Corporation)

8:50
12.2 Cu Corrosion Induced by Electrostatic Potential after Barrier-Metal Chemical Mechanical Polishing
Koji Maruyama, Morio Shiohara, Kouji Yamada, Seiichi Kondo, Shuichi Saito (Semiconductor Leading Edge Technologies, Inc.)

9:10
12.3 A Study of Copper Corrosion for Cleaning Process with Quartz Crystal Microbalance and Comb Electrodes
Shohei Shima, Yutaka Wada, Katsuhiko Tokushige, Akira Fukunaga, Manabu Tsujimura (Ebara Corporation)

9:30
12.4 Optical Metrology Based Post Cu CMP Metal Residue Detection and Characterization
Yunlong Li, Nancy Heylen, Tinne Delande, Paola Favia, Hugo Bender, Kristof Kellens (IMEC), Alexandre Tarnowka, Aviv Eliyahu (Nova Measuring Instruments Ltd.), Leonardus Leunissen (IMEC)

9:50
12.5 Performance Analysis of Several New CMP Slurries for 32 nm Cu Technology
C. V. V. S. Surisetty (Clarkson University), D. F. Canaperi (IBM at Albany Nanotech), S. V. Babu (Clarkson University)

10:10
12.6 Cu-CMP Assisted with Ultra Violet Light Irradiation Directly to Wafer Surface
Panart Khajornrungruang, Keiichi Kimura, Nobutaka Sumomogi (Kyushu Institute of Technology)

10:25
12.7 Evaluation of CMP Materials Using CASMAT CMP-TEG Wafer
Ken Okutani, Sou Anzai, Takashi Matsumoto, Yoshifumi Kawamoto (Consortium for Advanced Semiconductor Materials and Related Technologies)

10:40
12.8 Abrasive Free Electrochemical Mechanical Polishing (AF-ECMP) Process of Copper Film
Chao-Chang A. Chen, Ming-Hui Fang, Yan-De Lin (National Taiwan University of Science and Technology)

 

10:55
Closing Remarks
Chairs of ICPT2009: Manabu Tsujimura (Ebara Corporation)

11:00
Conference Ends